N-channel MOSFET with 60V drain-source voltage and 60A continuous drain current. Features low 6.25mΩ drain-source on-resistance and 104W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in a PPAK SO-8 package.
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Vishay SI7164DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 6.25mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 6.25mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 2.83nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 6.25W |
| Radiation Hardening | No |
| Rds On Max | 6.25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 23ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
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