N-channel MOSFET featuring 200V Drain-Source Voltage (Vdss) and 25A Continuous Drain Current (ID). Offers a low Drain-Source On-Resistance (Rds On) of 70mR. Designed for surface mount applications with a compact SOIC package. Includes fast switching characteristics with a 9ns fall time, 15ns turn-on delay, and 26ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7172DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
25A
Drain to Source Resistance
70mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
70mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
2.25nF
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5.4W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
70mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
4V
Turn-Off Delay Time
26ns
Turn-On Delay Time
15ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7172DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7172DP-T1-GE3 to view detailed technical specifications.
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