N-channel MOSFET with 25V drain-source voltage and 38A continuous drain current. Features low 2mΩ drain-to-source resistance and 83W maximum power dissipation. Packaged in a surface-mount SOIC case with dimensions of 4.9mm length, 5.89mm width, and 1.04mm height. Operates across a temperature range of -55°C to 150°C. Includes 6.59nF input capacitance and switching times of 46ns turn-on delay and 72ns turn-off delay.
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Vishay SI7194DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Resistance | 2mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 6.59nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 46ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
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