N-channel MOSFET, 30V Drain-Source Voltage, 15.8A Continuous Drain Current, and 11mΩ Drain-Source Resistance. Features 41.6W Max Power Dissipation, 1.577nF Input Capacitance, and fast switching times with 12ns Fall Time, 21ns Turn-On Delay, and 22ns Turn-Off Delay. Surface mount design with a compact 4.9mm x 5.89mm x 1.04mm footprint, operating from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7196DP-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 15.8A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.577nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | WFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 21ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7196DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7196DP-T1-E3 to view detailed technical specifications.
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