N-CHANNEL MOSFET, 30V Drain-Source Voltage, 15.8A Continuous Drain Current, and 11mΩ Max Drain-to-Source Resistance at 10V. Features 41.6W power handling and 5W max power dissipation. Surface mountable in a SOIC package with a 1.577nF input capacitance. Operating temperature range from -55°C to 150°C, with typical turn-on delay of 21ns and turn-off delay of 22ns.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Vishay SI7196DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 15.8A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.577nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | WFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 21ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7196DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7196DP-T1-GE3 to view detailed technical specifications.
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