Dual N-channel MOSFET with 30V drain-source voltage and 4.6A continuous drain current. Features low 40mΩ drain-source on-resistance, enabling high efficiency operation. Operates across a wide temperature range from -55°C to 150°C. Surface mountable in a compact 3.05mm x 3.05mm x 1.04mm package, ideal for space-constrained applications. Includes fast switching characteristics with turn-on delay of 7ns and fall time of 10ns.
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Vishay SI7214DN-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 40mR |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.1V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7ns |
| Width | 3.05mm |
| RoHS | Compliant |
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