Dual N-Channel MOSFET featuring 40V drain-source voltage and 6.5A continuous drain current. Surface mount component with 32mΩ drain-source on-resistance (max 39mΩ). Offers fast switching with 5ns fall time, 9ns turn-on delay, and 19ns turn-off delay. Operates from -50°C to 150°C with 2.5W maximum power dissipation. Packaged in tape and reel.
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Vishay SI7216DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 39mR |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 32mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 9ns |
| Width | 3.05mm |
| RoHS | Compliant |
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