N-channel MOSFET module featuring 30V drain-source breakdown voltage and 8A continuous drain current. Offers a low 25mΩ maximum drain-source on-resistance and 23W maximum power dissipation. Designed for surface mounting with a compact 3.05mm x 3.05mm x 1.04mm package. Includes fast switching characteristics with 10ns fall time and 15ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageModule
MountingSurface Mount
PolarityN-CHANNEL
Power23W
Quick Jump:
Technical Specifications
Vishay SI7218DN-T1-E3 technical specifications.
General
| Package/Case | Module |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25mR |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 23W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 23W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 15ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7218DN-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7218DN-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
