Surface mount N-channel MOSFET featuring 30V drain-source voltage and 25mΩ drain-source resistance at 10V gate-source voltage. This component offers a continuous drain current of 8A and a maximum power dissipation of 23W, with fast switching characteristics including a 10ns fall time and 15ns turn-on delay. It operates across a temperature range of -55°C to 150°C and includes two N-channel FETs within its package.
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI7218DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
8A
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
30V
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
700pF
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
23W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
25mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
10ns
Turn-On Delay Time
15ns
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7218DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7218DN-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.