Surface mount N-channel MOSFET featuring 30V drain-source voltage and 25mΩ drain-source resistance at 10V gate-source voltage. This component offers a continuous drain current of 8A and a maximum power dissipation of 23W, with fast switching characteristics including a 10ns fall time and 15ns turn-on delay. It operates across a temperature range of -55°C to 150°C and includes two N-channel FETs within its package.
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Vishay SI7218DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 700pF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 23W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 15ns |
| Width | 3.05mm |
| RoHS | Compliant |
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