N-Channel MOSFET with 30V Drain-to-Source Voltage (Vdss) and 6A Continuous Drain Current (ID). Features low 22mΩ Drain-to-Source Resistance (Rds On) and 23W Max Power Dissipation. This surface mount component offers fast switching with 10ns Fall Time, 20ns Turn-On Delay, and 15ns Turn-Off Delay. Operates across a wide temperature range of -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7224DN-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 570pF |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 23W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 20ns |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7224DN-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7224DN-T1-E3 to view detailed technical specifications.
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