Dual N-channel MOSFET transistor featuring 20V drain-source voltage and 10A continuous drain current. Offers low 16.4mR drain-to-source resistance and 23W maximum power dissipation. Surface mountable in a 8-Pin PowerPAK 1212 package, this RoHS compliant component operates from -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI7232DN-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 16.4mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Input Capacitance | 1.22nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 23W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.6W |
| Radiation Hardening | No |
| Rds On Max | 16.4mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 10ns |
| Width | 3.05mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7232DN-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
