Dual N-channel MOSFET transistor featuring 20V drain-source voltage and 10A continuous drain current. Offers low 16.4mR drain-to-source resistance and 23W maximum power dissipation. Surface mountable in a 8-Pin PowerPAK 1212 package, this RoHS compliant component operates from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power2.6W
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Technical Specifications
Vishay SI7232DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 16.4mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Input Capacitance | 1.22nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 23W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.6W |
| Radiation Hardening | No |
| Rds On Max | 16.4mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 10ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7232DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7232DN-T1-GE3 to view detailed technical specifications.
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