N-Channel Power MOSFET, featuring 100V drain-to-source voltage and 36.7A continuous drain current. This surface-mount device offers low on-resistance of 17mΩ (typical) and 18mΩ (max), with a threshold voltage of 1.5V. Designed for efficient switching, it exhibits a fall time of 7ns and turn-on/off delay times of 12ns and 18ns respectively. Operating across a wide temperature range of -55°C to 150°C, this component supports a maximum power dissipation of 46W.
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Vishay SI7252DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 36.7A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.17nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 46W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.01787oz |
| RoHS | Compliant |
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