N-channel MOSFET with 40V drain-source voltage and 20A continuous drain current. Features low 15.6mR drain-source on-resistance and 19mR Rds On Max. Operates with a nominal Vgs of 1.2V and a threshold voltage of 2.8V. This surface mount component offers fast switching with turn-on delay of 12ns and fall time of 10ns. Packaged in Tape and Reel, it is RoHS compliant and suitable for operation between -55°C and 150°C.
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Vishay SI7288DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 15.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 19mR |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 565pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 15.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.8V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 12ns |
| RoHS | Compliant |
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