N-channel MOSFET featuring 60V drain-source voltage and 6A continuous drain current. Offers a low 58mΩ drain-source on-resistance and 3V threshold voltage. Designed for surface mount with a 1.04mm height, 3.05mm length, and 3.05mm width. Includes 10ns turn-on delay and 20ns turn-off delay times, with 150°C maximum operating temperature.
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Vishay SI7308DN-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 58mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 58mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 665pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 58mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Width | 3.05mm |
| RoHS | Compliant |
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