P-channel MOSFET with a 60V drain-source voltage and 3.9A continuous drain current. Features a low 115mΩ drain-source on-resistance and a 150°C maximum operating temperature. This surface-mount component offers fast switching with turn-on delay of 10ns and fall time of 33ns. Designed for efficient power management with a maximum power dissipation of 19.8W.
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Vishay SI7309DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 115MR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 600pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 19.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 115mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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