N-channel MOSFET transistor featuring 100V drain-source voltage and 18A continuous drain current. Offers a low 58mΩ maximum drain-source on-resistance. Designed for surface mount with a 3.05mm x 3.05mm x 1.04mm PowerPAK 1212 package. Includes fast switching characteristics with 10ns turn-on delay and 10ns fall time. Operates from -55°C to 150°C with 52W maximum power dissipation.
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Vishay SI7322DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 58mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 58mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 58mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 10ns |
| Width | 3.05mm |
| RoHS | Compliant |
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