N-channel MOSFET with 20V drain-source breakdown voltage and 13A continuous drain current. Features low 5.5mΩ drain-source resistance and 3V threshold voltage. Operates across a -55°C to 150°C temperature range with 1.7W maximum power dissipation. Packaged in a surface-mount SOIC case, supplied on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.7W
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Technical Specifications
Vishay SI7366DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.7W |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7366DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7366DP-T1-GE3 to view detailed technical specifications.
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