N-channel MOSFET, 30V drain-source voltage, 23.8A continuous drain current, and 5.5mΩ drain-source resistance. Features a 15ns turn-on delay and 42ns turn-off delay, with a 10ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 56W. Surface mountable in a PPAK SO-8 package, this RoHS compliant component offers efficient switching for demanding applications.
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Vishay SI7374DP-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 23.8A |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 5.5nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7374DP-T1-E3 to view detailed technical specifications.
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