N-channel MOSFET with 30V drain-source voltage (Vdss) and 9A continuous drain current (ID). Features low 9.5mR drain-source on-resistance (Rds On Max) and 1.8W maximum power dissipation. Operates from -55°C to 150°C with a 20V gate-to-source voltage (Vgs). This surface mount component offers fast switching with a 7ns fall time and 16ns turn-on delay. Packaged in tape and reel, it is RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7390DP-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9.5mR |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7390DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7390DP-T1-E3 to view detailed technical specifications.
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