P-channel MOSFET with 12V drain-source voltage and 13.5A continuous drain current. Features low 13mΩ drain-source on-resistance and fast switching times with 22ns turn-on and 45ns fall times. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 33W. Surface mountable in a 1212-8 package, this RoHS compliant component is ideal for power management applications.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7405BDN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 13.5A |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 13mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 22ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7405BDN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7405BDN-T1-GE3 to view detailed technical specifications.
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