N-channel MOSFET with 60V drain-source voltage and 5.6A continuous drain current. Features low 25mR drain-source on-resistance and 1.5W max power dissipation. Operates from -55°C to 150°C, with a 3V threshold voltage and 20V gate-source voltage. Packaged in an 8-pin PowerPAK 1212 for surface mounting, supplied on tape and reel.
Package1212
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7414DN-T1-GE3 technical specifications.
General
Package/Case
1212
Continuous Drain Current (ID)
5.6A
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
25MR
Dual Supply Voltage
60V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
30ns
Turn-On Delay Time
15ns
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7414DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7414DN-T1-GE3 to view detailed technical specifications.
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