The SI7421DN-T1-GE3 is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 6.4A and a drain to source resistance of 25mR. The device is packaged in a small outline S-XDSO-C5 package and is surface mountable. The MOSFET is RoHS compliant and has a maximum power dissipation of 1.5W.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7421DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 6.4A |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 57ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7421DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7421DN-T1-GE3 to view detailed technical specifications.
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