P-channel MOSFET, 200V drain-source voltage, 2.2A continuous drain current. Features 174mΩ maximum drain-source on-resistance at nominal gate-source voltage. Operates from -55°C to 150°C with a maximum power dissipation of 1.9W. Surface mountable in a PPAK SO-8 package, RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7431DP-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 174mR |
| Drain to Source Voltage (Vdss) | -200V |
| Drain-source On Resistance-Max | 174mR |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 174mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 23ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7431DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7431DP-T1-E3 to view detailed technical specifications.
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