P-channel PowerPAK SO surface mount MOSFET with -200V drain-source voltage and 2.2A continuous drain current. Features 174mΩ drain-to-source resistance at nominal gate-source voltage of -4V. Operates from -55°C to 150°C with a maximum power dissipation of 1.9W. Includes fast switching characteristics with turn-on delay of 23ns and fall time of 49ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI7431DP-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 174mR |
| Drain to Source Voltage (Vdss) | -200V |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 174mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 23ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7431DP-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
