P-channel PowerPAK SO surface mount MOSFET with -200V drain-source voltage and 2.2A continuous drain current. Features 174mΩ drain-to-source resistance at nominal gate-source voltage of -4V. Operates from -55°C to 150°C with a maximum power dissipation of 1.9W. Includes fast switching characteristics with turn-on delay of 23ns and fall time of 49ns.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7431DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
2.2A
Drain to Source Resistance
174mR
Drain to Source Voltage (Vdss)
-200V
Fall Time
49ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Mount
Surface Mount
Nominal Vgs
-4V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
174mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-4V
Turn-Off Delay Time
110ns
Turn-On Delay Time
23ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7431DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7431DP-T1-GE3 to view detailed technical specifications.
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