P-channel PowerPAK SO MOSFET with -150V drain-source voltage and 3A continuous drain current. Features 90mΩ maximum drain-source on-resistance at a nominal gate-source voltage of -4V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.9W. Includes fast switching characteristics with turn-on delay time of 25ns and fall time of 46ns. Surface mountable in an 8-pin package, supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7439DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
3A
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
-150V
Drain-source On Resistance-Max
90mR
Fall Time
46ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Mount
Surface Mount
Nominal Vgs
-4V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-4V
Turn-Off Delay Time
115ns
Turn-On Delay Time
25ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7439DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7439DP-T1-GE3 to view detailed technical specifications.
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