The SI7452DP-T1-GE3 is a surface mount N-CHANNEL TrenchFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.9W and a continuous drain current of 11.5A. The device has a drain to source resistance of 8.3mR and a drain to source voltage of 60V. It is RoHS compliant and available in a tape and reel packaging with 3000 units per package.
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Vishay SI7452DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Resistance | 8.3mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 8.3mR |
| Resistance | 0.0083R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 45ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7452DP-T1-GE3 to view detailed technical specifications.
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