The SI7457DP-T1-GE3 is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 83.3W and a drain to source voltage of 100V. The device features a drain to source resistance of 42mR and a continuous drain current of 7.9A. It is packaged in a surface mount package and is RoHS compliant.
Vishay SI7457DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 7.9A |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.23nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83.3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 42mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| RoHS | Compliant |
No datasheet is available for this part.
