N-channel MOSFET with 60V drain-source voltage and 11A continuous drain current. Features low 9.6mΩ drain-source on-resistance and 1.9W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in an 8-pin SOIC package, supplied on tape and reel. Includes fast switching characteristics with 20ns turn-on and 30ns fall times.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7460DP-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 9.6mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 9.6mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 9.6mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7460DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7460DP-T1-E3 to view detailed technical specifications.
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