N-channel MOSFET with 60V drain-source voltage and 11A continuous drain current. Features low 9.6mΩ drain-source on-resistance and 1.9W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in an 8-pin SOIC package, supplied on tape and reel. Includes fast switching characteristics with 20ns turn-on and 30ns fall times.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI7460DP-T1-E3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI7460DP-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 9.6mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 9.6mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 9.6mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7460DP-T1-E3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
