N-channel PowerPAK SO MOSFET with 60V drain-source voltage and 11A continuous drain current. Features low 9.6mΩ drain-source on-resistance and 1V threshold voltage. Operates from -55°C to 150°C with a maximum power dissipation of 1.9W. This surface mount component offers fast switching speeds with a 20ns turn-on delay and 16ns fall time. Packaged in tape and reel for automated assembly.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7460DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
11A
Drain to Source Resistance
9.6mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
9.6MR
Dual Supply Voltage
60V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
9.6mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
75ns
Turn-On Delay Time
20ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7460DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7460DP-T1-GE3 to view detailed technical specifications.
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