P-channel Power MOSFET with 60V drain-source voltage and 8.6A continuous drain current. Features low 14.5mΩ drain-source on-resistance and 1.9W maximum power dissipation. Surface mountable in an 8-pin SOIC package, this component offers fast switching with 20ns turn-on delay and 20ns fall time. Operating temperature range from -55°C to 150°C, RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.9W
Quick Jump:
Technical Specifications
Vishay SI7461DP-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.6A
Drain to Source Resistance
14.5mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
14.5mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.9W
Rds On Max
14.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
205ns
Turn-On Delay Time
20ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7461DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7461DP-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
