P-Channel PowerPAK SO MOSFET featuring a -60V drain-source voltage and 8.6A continuous drain current. Offers low on-resistance with a maximum of 14.5mΩ at a 10V gate-source voltage. Designed for surface mount applications with a compact SOIC package, operating from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 20ns.
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Vishay SI7461DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.6A |
| Drain to Source Resistance | 14.5mR |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 6.25mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 14.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 205ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
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