P-Channel PowerPAK SO MOSFET featuring a -60V drain-source voltage and 8.6A continuous drain current. Offers low on-resistance with a maximum of 14.5mΩ at a 10V gate-source voltage. Designed for surface mount applications with a compact SOIC package, operating from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 20ns.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7461DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.6A
Drain to Source Resistance
14.5mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
6.25mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
14.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
205ns
Turn-On Delay Time
20ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7461DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7461DP-T1-GE3 to view detailed technical specifications.
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