P-channel power MOSFET with 40V drain-source voltage and 16.6A continuous drain current. Features low 8.3mΩ drain-to-source resistance at Vgs = -10V, 5V. Surface mountable in a leadless POWERPAK SOP-8 package. Operates from -55°C to 150°C with a maximum power dissipation of 39W. RoHS compliant and halogen-free.
MountingSurface Mount
PolarityP-CHANNEL
Power5W
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Technical Specifications
Vishay SI7463ADP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 16.6A |
| Drain to Source Resistance | 8.3mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.15nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -2.3V |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7463ADP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7463ADP-T1-GE3 to view detailed technical specifications.
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