P-channel power MOSFET featuring 11A continuous drain current and a drain-to-source voltage of -40V. Achieves a low on-resistance of 9.2mΩ at a nominal gate-source voltage of -3V. Designed for surface mounting in a leadless PowerPAK SOP-8 package, offering a compact footprint with dimensions of 4.9mm (L) x 5.89mm (W) x 1.04mm (H). Supports a maximum power dissipation of 1.9W and operates across a temperature range of -55°C to 150°C. This component is halogen-free and RoHS compliant.
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Vishay SI7463DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 9.2mR |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 9.2MR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 9.2mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 200ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
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