P-channel power MOSFET featuring 11A continuous drain current and a drain-to-source voltage of -40V. Achieves a low on-resistance of 9.2mΩ at a nominal gate-source voltage of -3V. Designed for surface mounting in a leadless PowerPAK SOP-8 package, offering a compact footprint with dimensions of 4.9mm (L) x 5.89mm (W) x 1.04mm (H). Supports a maximum power dissipation of 1.9W and operates across a temperature range of -55°C to 150°C. This component is halogen-free and RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.9W
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Technical Specifications
Vishay SI7463DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
11A
Drain to Source Resistance
9.2mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
9.2MR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.9W
Radiation Hardening
No
Rds On Max
9.2mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
200ns
Turn-On Delay Time
20ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7463DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7463DP-T1-GE3 to view detailed technical specifications.
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