N-channel power MOSFET featuring 200V drain-source voltage and 1.8A continuous drain current. Surface mountable in an 8-pin SOIC package, this component offers a low 240mΩ drain-to-source resistance. Operating across a -55°C to 150°C temperature range, it boasts fast switching times with turn-on delay at 10ns and fall time at 12ns. Maximum power dissipation is rated at 1.8W.
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Vishay SI7464DP-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 240mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
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