The SI7464DP-T1-GE3 is a single N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 1.8A and a drain to source voltage of 200V. The device features a drain to source resistance of 240mR and a maximum power dissipation of 1.8W. It is packaged in a surface mount package and is compliant with RoHS regulations.
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Vishay SI7464DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 240mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.01787oz |
| RoHS | Compliant |
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