P-channel MOSFET featuring -80V drain-source voltage and 28A continuous drain current. Offers a low 25mΩ drain-source on-resistance and 83W maximum power dissipation. Designed for surface mounting in an 8-pin PowerPAK SO package, this component operates from -55°C to 150°C. Key switching characteristics include a 45ns turn-on delay and 110ns fall time.
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Vishay SI7469DP-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 28A |
| Current | 27A |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | -80V |
| Drain-source On Resistance-Max | 25MR |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 4.7nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 5.2W |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 105ns |
| Turn-On Delay Time | 45ns |
| Voltage | 80V |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
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