P-channel PowerPAK SO surface mount MOSFET with -80V drain-source breakdown voltage and 28A continuous drain current. Features low 25mR drain-source on-resistance and 15ns turn-on delay. Operates from -55°C to 150°C with a maximum power dissipation of 83W. RoHS compliant and lead-free.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7469DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
28A
Drain to Source Breakdown Voltage
-80V
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
-80V
Drain-source On Resistance-Max
25MR
Fall Time
100ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
4.7nF
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
105ns
Turn-On Delay Time
15ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7469DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7469DP-T1-GE3 to view detailed technical specifications.
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