N-channel MOSFET transistor featuring 60V drain-source voltage and 15A continuous drain current. Surface mountable in an 8-pin SOIC package, this component offers a low 7.5mΩ drain-source on-resistance. Operates with a nominal gate-source voltage of 3V and boasts fast switching times with a 25ns turn-on delay and 20ns fall time. Maximum power dissipation is 1.9W, with an operating temperature range of -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7478DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
15A
Drain to Source Resistance
7.5mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
7.5mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
7.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
115ns
Turn-On Delay Time
25ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7478DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7478DP-T1-GE3 to view detailed technical specifications.
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