The SI7483ADP-T1-GE3 is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 14A and a drain to source breakdown voltage of 30V. The device features a drain to source resistance of 5.7mR and a maximum power dissipation of 1.9W. It is packaged in a small outline, R-XDSO-C5 package and is RoHS compliant.
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Vishay SI7483ADP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 5.7mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 22ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7483ADP-T1-GE3 to view detailed technical specifications.
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