P-channel MOSFET, 20V drain-source voltage, 12.5A continuous drain current, and 7.3mΩ maximum drain-source on-resistance. Features a 150°C maximum operating temperature, 1.8W maximum power dissipation, and surface mount capability in an SO package. Compliant with RoHS standards, this component offers fast switching with turn-on delay times of 80ns and fall times of 140ns.
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Vishay SI7485DP-T1-GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 12.5A |
| Drain to Source Resistance | 7.3mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 7.3mR |
| Fall Time | 140ns |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | -900mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7.3mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -900mV |
| Turn-Off Delay Time | 360ns |
| Turn-On Delay Time | 80ns |
| RoHS | Compliant |
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