P-channel MOSFET, 20V drain-source voltage, 12.5A continuous drain current, and 7.3mΩ maximum drain-source on-resistance. Features a 150°C maximum operating temperature, 1.8W maximum power dissipation, and surface mount capability in an SO package. Compliant with RoHS standards, this component offers fast switching with turn-on delay times of 80ns and fall times of 140ns.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7485DP-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
12.5A
Drain to Source Resistance
7.3mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
7.3mR
Fall Time
140ns
Gate to Source Voltage (Vgs)
8V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.8W
Mount
Surface Mount
Nominal Vgs
-900mV
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
7.3mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-900mV
Turn-Off Delay Time
360ns
Turn-On Delay Time
80ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI7485DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7485DP-T1-GE3 to view detailed technical specifications.
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