P-Channel PowerPAK SO surface mount MOSFET with -30V drain-source voltage and 11A continuous drain current. Features 8.5mΩ maximum drain-source on-resistance at a nominal gate-source voltage of -3V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.8W. Includes turn-on delay time of 150ns and fall time of 190ns. RoHS compliant and packaged in a tape and reel.
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Vishay SI7491DP-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 8.5mR |
| Fall Time | 190ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 150ns |
| RoHS | Compliant |
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