P-channel MOSFET, 30V drain-source breakdown voltage, 18A continuous drain current, and 8.5mΩ maximum drain-source on-resistance. Features include a -3V gate-source threshold voltage, 150ns turn-on delay, and 120ns turn-off delay. This surface-mount component operates within a -55°C to 150°C temperature range and is packaged in a PPAK SO-8 (SOIC) case. RoHS compliant and lead-free.
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Vishay SI7491DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 8.5mR |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 150ns |
| RoHS | Compliant |
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