P-channel MOSFET, 30V drain-source breakdown voltage, 18A continuous drain current, and 8.5mΩ maximum drain-source on-resistance. Features include a -3V gate-source threshold voltage, 150ns turn-on delay, and 120ns turn-off delay. This surface-mount component operates within a -55°C to 150°C temperature range and is packaged in a PPAK SO-8 (SOIC) case. RoHS compliant and lead-free.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power5W
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Technical Specifications
Vishay SI7491DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
8.5mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
8.5mR
Fall Time
90ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.8W
Mount
Surface Mount
Nominal Vgs
-3V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
5W
Radiation Hardening
No
Rds On Max
8.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
120ns
Turn-On Delay Time
150ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI7491DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7491DP-T1-GE3 to view detailed technical specifications.
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