N-channel and P-channel MOSFET with 12V drain-source voltage and 7.6A continuous drain current. Features low 26mΩ drain-source on-resistance and 1.4W maximum power dissipation. Operates from -55°C to 150°C, with turn-on delay of 35ns and fall time of 42ns. Packaged in an 8-pin SOIC for surface mounting, supplied on tape and reel.
Sign in to ask questions about the Vishay SI7540DP-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI7540DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 32mR |
| Fall Time | 42ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 35ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7540DP-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
