P-channel MOSFET with 20V drain-source voltage and 35A continuous drain current. Features low 3.1mΩ drain-source on-resistance and 3.9mΩ maximum on-resistance. Operates with a 12V gate-source voltage, offering fast switching with 35ns turn-on and 28ns fall times. Surface-mount TO-252-3 package with 52W maximum power dissipation, suitable for demanding applications.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power3.7W
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Technical Specifications
Vishay SI7615DN-T1-GE3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
35A
Drain to Source Resistance
3.1mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
3.9MR
Fall Time
28ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
6nF
Lead Free
Lead Free
Length
3.3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3.7W
Radiation Hardening
No
Rds On Max
3.9mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
80ns
Turn-On Delay Time
35ns
Width
3.3mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7615DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7615DN-T1-GE3 to view detailed technical specifications.
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