P-channel MOSFET with 20V drain-source voltage and 35A continuous drain current. Features low 3.1mΩ drain-source on-resistance and 3.9mΩ maximum on-resistance. Operates with a 12V gate-source voltage, offering fast switching with 35ns turn-on and 28ns fall times. Surface-mount TO-252-3 package with 52W maximum power dissipation, suitable for demanding applications.
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Vishay SI7615DN-T1-GE3 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 3.1mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 3.9MR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 6nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.7W |
| Radiation Hardening | No |
| Rds On Max | 3.9mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
| Width | 3.3mm |
| RoHS | Compliant |
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