P-channel PowerPAK 1212 MOSFET with -30V drain-source voltage and -35A continuous drain current. Features low 12.3mΩ drain-to-source resistance and 3.7W power dissipation. Operates from -55°C to 150°C with a 1.8nF input capacitance. Surface mountable, RoHS compliant, and supplied in tape and reel packaging.
MountingSurface Mount
PolarityP-CHANNEL
Power3.7W
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Technical Specifications
Vishay SI7617DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
-35A
Drain to Source Resistance
12.3mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
11ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.8nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3.7W
Radiation Hardening
No
Rds On Max
12.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2.5V
Turn-Off Delay Time
30ns
Turn-On Delay Time
40ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI7617DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7617DN-T1-GE3 to view detailed technical specifications.
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