P-channel MOSFET with a -20V drain-source voltage and 40A continuous drain current. Features a low 4.9mΩ drain-source on-resistance and 54W maximum power dissipation. Designed for surface mounting in a PPAK SO-8 package, this component offers fast switching with turn-on delay of 19ns and fall time of 13ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI7635DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
40A
Drain to Source Resistance
4.9mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
4.9mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
4.595nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
54W
Mount
Surface Mount
Nominal Vgs
-2.2V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
4.9mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2.2V
Turn-Off Delay Time
65ns
Turn-On Delay Time
19ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI7635DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7635DP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
