P-channel MOSFET with a -20V drain-source voltage and 40A continuous drain current. Features a low 4.9mΩ drain-source on-resistance and 54W maximum power dissipation. Designed for surface mounting in a PPAK SO-8 package, this component offers fast switching with turn-on delay of 19ns and fall time of 13ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
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Vishay SI7635DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 4.9mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 4.9mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 4.595nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Surface Mount |
| Nominal Vgs | -2.2V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 4.9mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -2.2V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 19ns |
| Weight | 0.01787oz |
| RoHS | Compliant |
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