The SI7652DP-T1-E3 is a N-CHANNEL MOSFET with a continuous drain current of 15A and a drain to source breakdown voltage of 30V. It has a drain to source resistance of 18.5mR and a maximum operating temperature of 150°C. The device is packaged in a SMALL OUTLINE, R-PDSO-N8 package and is RoHS compliant. It is suitable for use in a variety of applications including power management and switching circuits.
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Vishay SI7652DP-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 18.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.9W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.9W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| RoHS | Compliant |
No datasheet is available for this part.
