The SI7655ADN-T1-GE3 is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 57W and a continuous drain current of -40A. The device is packaged in a SMALL OUTLINE, S-PDSO-C5 package and is RoHS compliant. It is suitable for surface mount applications.
Resistance0.003R
MountingSurface Mount
PolarityP-CHANNEL
Power4.8W
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Technical Specifications
Vishay SI7655ADN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -40A |
| Drain to Source Resistance | 3.6mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 830um |
| Input Capacitance | 6.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 4.8W |
| Rds On Max | 3.6mR |
| Reach SVHC Compliant | No |
| Resistance | 0.003R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7655ADN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7655ADN-T1-GE3 to view detailed technical specifications.
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