The SI7664DP-T1-GE3 is a N-CHANNEL TrenchFET MOSFET from Vishay with a maximum operating temperature range of -55°C to 150°C. It has a maximum drain to source breakdown voltage of 30V and a maximum continuous drain current of 40A. The device is surface mount and has a maximum power dissipation of 5.4W. It is compliant with RoHS regulations.
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Vishay SI7664DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 7.77nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.4W |
| Rds On Max | 3.1mR |
| Resistance | 0.0031R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 41ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7664DP-T1-GE3 to view detailed technical specifications.
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