The SI7682DP-T1-E3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 17.5A and a drain to source breakdown voltage of 30V. The device has a drain to source resistance of 9mR and a maximum power dissipation of 27.5W. The SI7682DP-T1-E3 is lead free and RoHS compliant.
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Vishay SI7682DP-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 17.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.595nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27.5W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 18ns |
| RoHS | Compliant |
No datasheet is available for this part.
